SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 85.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.400 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.210 INCHES MAXIMUM |
OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |