| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | POINT CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 6.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 80.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL AND |
| GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | PHOTOTRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PN |