| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS |
| POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL AND |
| PLASTIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 1 UNINSULATED WIRE LEAD AND |
| 1 CASE |
| OVERALL LENGTH | 0.114 INCHES NOMINAL |
| OVERALL DIAMETER | 0.098 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | PHOTOTRANSISTOR |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |