SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 15.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL AND |
| GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |