| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE SULFIDE |
| INTERNAL CONFIGURATION | POINT CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND |
| 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES MAXIMUM DRAIN CURRENT |
| POWER RATING PER CHARACTERISTIC | 60.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.155 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | PHOTOTRANSISTOR |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PN |