| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND |
| 7.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.115 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.062 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | PHOTOTRANSISTOR |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | PLATE PHOTOTRANSISTOR MTG AND ONE FT BUSS WIRE 20 AWG; INTERNAL JUNCTION CONFIGURATION: NPN |